AO4354 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 23a r ds(on) (at v gs =10v) < 3.7m w r ds(on) (at v gs = 4.5v) < 5.3m w application 100% uis tested 100% r g tested 30v ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al g ds soic-8 top view bottom view d d d d s s s g symbol v ds v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jl c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-lead 3.1 t a =25c av 100ns 36 avalanche current c t a =100c drain-source voltage absolute maximum ratings t a =25c unless otherwise noted 30 v p d c t a =25c t a =100c power dissipation b maximum units parameter i d w 1.2 68 174 v 20 gate-source voltage continuous drain current thermal characteristics pulsed drain current c a -55 to 150 mj 37 avalanche energy l=0.1mh c 23 14 junction and storage temperature range units parameter typ maximum junction-to-ambient a c/w r q ja 31 59 40 max rev0: april 2012 www.aosmd.com page 1 of 5
AO4354 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 3 3.7 t j =125c 4.1 5 4.1 5.3 m w g fs 105 s v sd 0.7 1 v i s 4 a c iss 2010 pf c oss 898 pf c rss 124 pf r g 0.9 1.8 2.7 w q g (10v) 36 49 nc q g (4.5v) 17 23 nc q gs 6 nc q gd 8 nc t d(on) 7.5 ns t r 4.0 ns t 37.0 ns i s =1a,v gs =0v maximum body-diode continuous current diode forward voltage v gs =4.5v, i d =20a v gs =10v, i d =20a dynamic parameters v ds =5v, i d =20a v ds =v gs, i d =250 m a drain-source breakdown voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 m a, v gs =0v i dss gate-body leakage current v ds =0v, v gs = 20v v gs =10v, v ds =15v, r l =0.75 w , r =3 w m a zero gate voltage drain current m w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz turn-on delaytime input capacitance total gate charge v gs =10v, v ds =15v, i d =20a turn-on rise time gate drain charge total gate charge v gs =0v, v ds =0v, f=1mhz gate source charge output capacitance turn-off delaytime r ds(on) static drain-source on-resistance gate resistance forward transconductance switching parameters t d(off) 37.0 ns t f 7.5 ns t rr 14 ns q rr 20.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off fall time r gen =3 w body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s i f =20a, di/dt=500a/ m s turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev0: april 2012 www.aosmd.com page 2 of 5
AO4354 typical electrical and thermal characteristics 0 10 20 30 40 50 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 4.5v 10v 3v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev0: april 2012 www.aosmd.com page 3 of 5
AO4354 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 10ms 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =75 c/w figure 14: single pulse power rating junction - to - ambient (note f) rev0: april 2012 www.aosmd.com page 4 of 5
AO4354 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: april 2012 www.aosmd.com page 5 of 5
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